The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface-Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Product Status: Active
  • High Small Signal Gain: 15 dB @ 4 GHz
  • High Output Power: 15W PSAT
  • High Breakdown Voltage, Efficiency and Temperature Operation
Technical Resources
Data Sheet

Additional information


GaN HEMT Transistor Amplifier


15 W, 6.0 GHz